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| Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 88N15 IXTT 88N15 V DSS I D25 RDS(on) = = = 150 V 88 A 22 m Symbol V DSS V DGR VGS VGSM I D25 I DM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 150 150 20 30 88 352 88 50 1.5 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C TO-247 AD (IXTH) (TAB) TO-268 (IXTT) Case Style G G = Gate S = Source S D = Drain TAB = Drain (TAB) Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 300 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25C, unless otherwise specified) V DSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 250 A V DS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 150 2.0 4.0 100 25 1 22 V V nA A mA m VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2003 IXYS All rights reserved DS99034(04/03) IXTH 88N15 IXTT 88N15 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 35 48 4000 VGS = 0 V, VDS = 25 V, f = 1 MHz 1150 440 24 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 (External) 33 80 18 170 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 40 105 0.31 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline g fs Ciss C oss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test Dim. Source-Drain Diode Symbol IS I SM VSD Trr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 88 352 1.5 A A V ns C Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A -di/dt = 100 A/s VR = 100V 150 2.5 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
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